Tunable Bands in Biased Multilayer Epitaxial Graphene
Williams, Michael D, Clark Atlanta University Samarakoon, Duminda K., Clark Atlanta University Hess, Dennis W., Georgia Institute of Technology Wang, Xiao-Qian, Clark Atlanta University
2012-02-28
2010-2019
We have studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias. Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electronic density-of-states in valence bands near the Fermi level. Evolution of the electronic structure of graphite and rotational-stacked multilayer epitaxial graphene as a function of the applied electric bias is investigated using first-principles density-functional theory including interlayer van der Waals interactions. The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The implications of controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC for future device applications are discussed.
text
application/pdf
articles
Nanoscale, 2012, 4, 2962
Clark Atlanta University
10.1039/c2nr11991a
http://hdl.handle.net/20.500.12322/cau.ir:2012_william_md
http://rightsstatements.org/vocab/InC/1.0/