Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development, 1981

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Title: Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development, 1981
Author: Ulanmo, Peter Obiajulu
Decade: 1980-1989
Abstract: The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively.
Document Type: text
Format: application/pdf
Date of Award: 1981-07-01
Degree Type: thesis
Degree Name: Master of Science (MS)
Granting Institution: Atlanta University
Department: School of Arts and Sciences, Chemistry
Advisor: Bota, Kofi B.
Polk, Malcolm B.
Institution: Clark Atlanta University
Geographic Location: Georgia--Atlanta
Handle: http://hdl.handle.net/20.500.12322/cau.td:1981_ulanmo_peter_o