Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development, 1981
Ulanmo, Peter Obiajulu
1980-1989
The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively.
text
application/pdf
1981-07-01
thesis
Master of Science (MS)
Atlanta University
School of Arts and Sciences, Chemistry
Bota, Kofi B. Polk, Malcolm B.
Clark Atlanta University
Georgia--Atlanta
http://hdl.handle.net/20.500.12322/cau.td:1981_ulanmo_peter_o