Date of Award

7-1-1981

Degree Type

Thesis

University or Center

Atlanta University (AU)

School

School of Arts and Sciences

Degree Name

M.S.

Department

Chemistry

First Advisor

Professor Malcolm B. Polk

Second Advisor

Professor Kofi B. Bota

Abstract

The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively.

Share

COinS